Magnetic diode exploiting giant positive magnetoresistance in ferrite/semiconductor heterostructures

Autor:	Amal K. Das, Anirban Sarkar, R. Adhikari, G. R. Patta
Rok vydání:	2011
Předmět:	Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Magnetoresistance Spin valve Ferrite (magnet) Curie temperature Giant magnetoresistance Heterojunction Magnetic field Diode
Zdroj:	Applied Physics Letters. 98:183504
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.3587626
Popis:	Fe3O4/p-Si and NiFe2O4/p-Si heterostructures were fabricated and their electrotransport and magnetotransport properties were studied. Both heterostructures showed rectifying as well as spin valve property below a critical temperature of 50 K which is independent of Curie temperature of magnetic films. Fe3O4/p-Si and NiFe2O4/p-Si heterostructures show giant positive junction magnetoresistance (JMR) of 2000% and 200% at 10 K, respectively. The JMR for Fe3O4/p-Si saturates at a much lower magnetic field compared to the other heterostructures, thus making it a better choice for magnetic diode.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::56045970a9cb72015d4d1411fb5d1580 https://doi.org/10.1063/1.3587626 Zobrazit plný text záznamu