| Popis: |
The photocurrent response of Silicon wafers scanned by laser beams of variable wavelength and intensity is evaluated to assess process-induced defects in their lateral and in-depth distribution, as well as in their chemical nature. Large-area transparent contacts to bare wafers, for current collection and surface passivation, are made by electrolyte chambers (ELYMAT principle). The application of the analytical technique is discussed for a variety of process development tasks, among them evaluation of quartz quality impact on bulk minority carrier lifetime and surface-near defect formation, intrinsic gettering and DZ characterization, as well as oxide interface quality. |
