Dependence of ZnTe‐based contact structure properties on nitrogen concentration

Autor:	Masahiko Kawata, Masayuki Momose, A. Taike, Kazuhiro Mochizuki, Jun Gotoh, Shinichi Nakatsuka
Rok vydání:	1996
Předmět:	Resistive touchscreen Photoluminescence Materials science Physics and Astronomy (miscellaneous) Superlattice Diffusion Inorganic chemistry Analytical chemistry chemistry.chemical_element Nitrogen Secondary ion mass spectrometry chemistry Layer (electronics) Ohmic contact
Zdroj:	Applied Physics Letters. 68:388-390
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.116694
Popis:	The effect of nitrogen concentration on the properties of ZnTe‐based contact structures, which consist of p‐ZnTe layers, ZnSe/ZnTe graded superlattices and p‐ZnSe layers is described. The nitrogen concentration of the ZnTe layer was varied by using a modulation doping method. Ohmic I–V characteristics were observed when the nitrogen concentration of the ZnTe layer was as low as 3×1018 cm−3. When the nitrogen concentration rose above 1×1019 cm−3, however, no current was observed in the I–V curves. Nitrogen diffusion from the ZnTe layer to the superlattice and the ZnSe layer was observed by SIMS analysis and PL measurement. The ZnSe layers became highly resistive, probably because deep donors were induced by the nitrogen diffusion.
Databáze:	OpenAIRE
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