| Autor: |
null Chernikov E. V., null Butenko P. N., null Scheglov M. P., null Timashov R. B., null Chikiryaka A. V., null Stepanov S. I., null Pechnikov A. I., null Kushnarev B. O., null Almaev A. V., null Nikolaev V. I. |
| Rok vydání: |
2022 |
| Zdroj: |
Technical Physics Letters. 48:76 |
| ISSN: |
1726-7471 |
| DOI: |
10.21883/tpl.2022.07.54046.19211 |
| Popis: |
The effect of the gaseous medium composition on the electrically conductive properties of In2O3-Ga2O3 films obtained by halide vapor phase epitaxy has been studied. In the temperature range of 100-550oC, the In2O3-Ga2O3 films exhibit high sensitivity to H2, NH3 and possess hyphen performance and low base resistance. A qualitative mechanism for the sensitivity of In2O3-Ga2O3 films to gases is proposed. Keywords: In2O3-Ga2O3, halide vapor-phase epitaxy, gas sensitivity. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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