First-principles study of H2S adsorption and dissociation on Mo(1 1 0)

Autor: Haijun Luo, Ming-Qiu Tan, Jian-Qiu Cai, Xiang-Ming Tao
Rok vydání: 2015
Předmět:
Zdroj: Computational Materials Science. 101:47-55
ISSN: 0927-0256
DOI: 10.1016/j.commatsci.2015.01.003
Popis: The dissociative adsorption of H2S on perfect and S-covered Mo(1 1 0) surfaces have been studied using density functional theory. Adsorption mechanisms of H2S, SH, S and H on both surfaces were analyzed and all possible potential energy profiles of H2S dissociation processes were mapped out. It indicated that H2S, SH, S, and H energetically favor the short bridge, long bridge, hollow, and hollow sites, respectively, on perfect surface, and favor the top, long bridge, hollow, and hollow sites, respectively, on S-covered surface. The first H2S dehydrogenation on clean surface has a barrier of 0.18–0.31 eV, while it required a high energy barrier of 0.40–0.88 eV on S-covered surface. The second dehydrogenation showed a lower barrier of 85 meV on perfect surface, but a higher barrier of 0.29 eV on S-covered surface. All these findings indicated that H2S can easily decompose on perfect Mo(1 1 0) surface, but the presence of atomic sulfur went against the H–S bond-breaking process both thermodynamically and kinetically. Finally, densities of electronics states and vibrational frequencies have been used to characterize the interactions between adsorbed species and the substrate.
Databáze: OpenAIRE