| Autor: |
M.A. Kulakov, S.V. Ryzhkov, B. Bullemer, V.G. Lifshits, Ignaz Eisele, Andrey V. Zotov |
| Rok vydání: |
1996 |
| Předmět: |
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| Zdroj: |
Surface Science. :358-363 |
| ISSN: |
0039-6028 |
| DOI: |
10.1016/0039-6028(95)01160-9 |
| Popis: |
Si(111)√3 × √3-B surface phase has been formed by high-temperature annealing of B-doped Si samples. Low-energy electron diffraction observations have revealed that the Si(111)√3 × √3-B surface phase is very stable with respect to heating and that the √3 × √3 reconstruction is still detected at temperature as high as 950°C. Scanning tunnelling microscopy has been used to study the growth of Si on Si(111)√3 × √3-B surface. At low temperatures (20–300°C) the growth has been found to be affected greatly by surface defects which trap Si atoms and act as sites of preferential island nucleation. At temperatures of Si(111) epitaxy (≥ 400°C) Si islands grow amorphous up to a certain critical size and then “crystallize” to form epitaxial islands with a thickness of two Si(111) bilayers. The structure on top of epitaxial Si islands is always √3 × √3 which suggests boron segregation to the surface. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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