Tunnelling current characteristics of plasma oxidised ultrathin SiO2
| Autor: | T Tuurnala, T Majamaa |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Materials science
Condensed matter physics Oxide Physics::Optics Plasma Electron Condensed Matter Physics Atomic and Molecular Physics and Optics Computer Science::Other Condensed Matter::Materials Science chemistry.chemical_compound Amplitude Effective mass (solid-state physics) Nuclear magnetic resonance chemistry Electric field Current density Mathematical Physics Quantum tunnelling |
| Zdroj: | Physica Scripta. :310-311 |
| ISSN: | 1402-4896 0031-8949 |
| DOI: | 10.1088/0031-8949/1997/t69/066 |
| Popis: | Thin SiO2 films, which have been fabricated by ultra vacuum plasma oxidation, have been characterised by method based on simple I/V-measurement. Tunnelling current through thin SiO2 film is observed to have a small oscillatory component with high electric field. This current oscillation is due to resonance between injected electron waves in the SiO2 conduction band and waves reflected at the SiO2/Si interface. The phase and the amplitude of the oscillation depends on the oxide film thickness [1]. Oxide thickness and electron effective mass in the SiO2 conduction band can be evaluated by fitting theoretical formula for Fowler-Nordheim tunnelling current density to measured data. |
| Databáze: | OpenAIRE |
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