Scalable Integration of Coplanar Heterojunction Monolithic Devices on Two-Dimensional In2Se3
| Autor: | Debopriya Dutta, Elad Koren, Pranab K. Mohapatra, Subhrajit Mukherjee, Ariel Ismach, Lital Dezanashvili |
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| Rok vydání: | 2020 |
| Předmět: |
Electron mobility
Materials science business.industry General Engineering General Physics and Astronomy chemistry.chemical_element Schottky diode Heterojunction 02 engineering and technology Integrated circuit 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences law.invention Photodiode chemistry law Optoelectronics General Materials Science 0210 nano-technology business Ohmic contact Indium Nanosheet |
| Zdroj: | ACS Nano. 14:17543-17553 |
| ISSN: | 1936-086X 1936-0851 |
| DOI: | 10.1021/acsnano.0c08146 |
| Popis: | The formation of lateral heterojunction arrays within two-dimensional (2D) crystals is an essential step to realize high-density, ultrathin electro-optical integrated circuits, although the assembling of such structures remains elusive. Here we demonstrated a rapid, scalable, and site-specific integration of lateral 2D heterojunction arrays using few-layer indium selenide (In2Se3). We use a scanning laser probe to locally convert In2Se3 into In2O3, which shows a significant increase in carrier mobility and transforms the metal-semiconductor junctions from Schottky to ohmic type. In addition, a lateral p-n heterojunction diode within a single nanosheet is demonstrated and utilized for photosensing applications. The presented method enables high-yield, site-specific formation of lateral 2D In2Se3-In2O3-based hybrid heterojunctions for realizing nanoscale devices with multiple advanced functionalities. |
| Databáze: | OpenAIRE |
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