Focused-ion-beam implantation in strained InGaAs-GaAs quantum wells

Autor:	T. E. Jackman, S. Charbonneau, Margaret Buchanan, I. M. Templeton, G. C. Aers, L. B. Allard
Rok vydání:	1992
Předmět:	Physics Ingaas gaas General Physics and Astronomy Atomic physics Focused ion beam Quantum well
Zdroj:	Canadian Journal of Physics. 70:1023-1026
ISSN:	1208-6045 0008-4204
DOI:	10.1139/p92-164
Popis:	Photoluminescence spectroscopy (PL) is used to monitor the degree of focused ion beam induced interdiffusion in InGaAs–GaAs quantum wells using 100 keV Ga+ and Si+ ions. The observed transition energy shifts are consistent with the effects of channeling of the incident ions near normal incidence. PL decay times obtained from pulsed excitation experiments at higher dose rates indicate incomplete annealing of defects in the quantum wells resulting in an enhanced nonradiative decay rate. If Si+ ions are implanted instead of Ga+ ions we find a red shift of the PL peak positions at very low doses owing to a doping effect in the quantum wells.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::55d71c54202826b0f16572fc8b0779a1 https://doi.org/10.1139/p92-164 Zobrazit plný text záznamu