Scanning Spreading Resistance Microscopy as a Technique for Silicon Solar Cell Emitter Structure Characterization

Autor:	Doering, S., Jakschik, S., Mikolajick, T., Eyben, P., Hantschel, T., Vandervorst, W.
Jazyk:	angličtina
Rok vydání:	2011
Předmět:	Advanced Photovoltaics : New Concepts and Ultra-High Efficiency Fundamental Studies
DOI:	10.4229/26theupvsec2011-1bo.10.5
Popis:	26th European Photovoltaic Solar Energy Conference and Exhibition; 122-125 In our work we demonstrate the ability of SSRM (Scanning Spreading Resistance Microscopy) as a technique that visualizes two dimensional dopant distribution maps with high lateral resolution and a high dynamic range. The method is applied to a completely processed multi crystalline silicon solar cell sample exhibiting high ohmic emitter areas between the front metallization grid and a low ohmic emitter underneath the front metal grid. After measuring the device under test, a known calibration sample was scanned to correlate SSRM amplifier output values to actual dopant distribution information. Expected differences in dopant concentration and depth of the emitter are examined.
Databáze:	OpenAIRE
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