Synthesis of monoclinic structure gallium oxide film on sapphire substrate by magnetron sputtering
| Autor: | Jian-xu Sun, Bo Li, De-shuang Zhang, Jinshi Zhao, Zhengchun Yang, Kailiang Zhang, Yujie Yuan, Wei Mi, Yemei Han |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Scanning electron microscope Band gap business.industry Analytical chemistry 02 engineering and technology Substrate (electronics) Sputter deposition 021001 nanoscience & nanotechnology Condensed Matter Physics Microstructure 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Optics 0103 physical sciences Sapphire Electrical and Electronic Engineering 0210 nano-technology business Monoclinic crystal system Diffractometer |
| Zdroj: | Optoelectronics Letters. 13:295-298 |
| ISSN: | 1993-5013 1673-1905 |
| DOI: | 10.1007/s11801-017-7065-y |
| Popis: | Gallium oxide (Ga2O3) films were deposited on singlecrystalline sapphire (0001) substrate by radio frequency (RF) magnetron sputtering technique in the temperature range of 300—500 °C. The microstructure of the β-Ga2O3 films were investigated in detail using X-ray diffractometer (XRD) and scanning electron microscope (SEM). The results show that the film prepared at 500 °C exhibits the best crystallinity with a monoclinic structure (β-Ga2O3). Structure analysis reveals a clear out-of-plane orientation of β-Ga2O3 (201) ǁ Al2O3 (0001). The average transmittance of these films in the visible wavelength range exceeds 90%, and the optical band gap of the films varies from 4.68 eV to 4.94 eV which were measured by an ultraviolet-visible-near infrared (UV-vis-NIR) spectrophotometer. Therefore, it is hopeful that the β-Ga2O3 film can be used in the UV optoelectronic devices. |
| Databáze: | OpenAIRE |
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