Investigation and impact of LDD variations on the drain disturb in normally-on SONOS NOR flash device
| Autor: | Jun Hu, Duan Wenting, Hualun Chen, Donghua Liu, Wei Xiong, Wensheng Qian, Shichang Zou, Weiran Kong, Zhaozhao Xu |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
High energy Materials science business.industry 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Lower energy Surfaces Coatings and Films Electronic Optical and Magnetic Materials Flash (manufacturing) Large dose 0103 physical sciences Optoelectronics Stress time Peak value Electrical and Electronic Engineering 0210 nano-technology Safety Risk Reliability and Quality business Quantum tunnelling |
| Zdroj: | Microelectronics Reliability. 84:157-162 |
| ISSN: | 0026-2714 |
| DOI: | 10.1016/j.microrel.2018.03.039 |
| Popis: | In this paper, we elaborated non-localized drain disturb (DD) in the normally-on silicon-oxide-nitride-oxide‑silicon (SONOS) flash device by experiments and simulations. It was found that a peak value of vertical tunneling oxide (TO) E-Field at channel center occurs along with DD stress time. This indication was ascribed to different charge de-trapping rate at channel-inside and drain-side region. Additionally, the impact of lightly doped drain (LDD) on the DD immunity was fully investigated. It indicated that large dose and high energy of LDD would degrade DD immunity and that LDD optimization achieves better tradeoff between on-current and DD immunity. Finally, this paper confirmed that LDD with larger dose and lower energy is preferable for better tradeoff between on-current and DD immunity. It also reveals that the tradeoff is still inevitable to achieve ultrahigh DD immunity. |
| Databáze: | OpenAIRE |
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