Implications of recent density-of-states measurements for optical and transport properties of a-Si:H
| Autor: | S. M. Kelso, Warren B. Jackson, Chuang-Chuang Tsai |
|---|---|
| Rok vydání: | 1985 |
| Předmět: |
Amorphous silicon
Materials science Condensed matter physics business.industry Photoconductivity Electron Condensed Matter Physics Capacitance Electronic Optical and Magnetic Materials chemistry.chemical_compound Lattice constant Phase coherence chemistry Materials Chemistry Ceramics and Composites Density of states Optoelectronics Absorption (electromagnetic radiation) business |
| Zdroj: | Journal of Non-Crystalline Solids. :281-290 |
| ISSN: | 0022-3093 |
| DOI: | 10.1016/0022-3093(85)90657-x |
| Popis: | In this paper, recent developments in the determination of the density-of-states for hydrogenated amorphous silicon are reviewed, and the implications of these measurements for optical and transport measurements are discussed. The DOS derived from electron spectroscopies is remarkably consistent with DOS obtained from optical absorption, photoconductivity, and capacitance measurements. Both optical and transport measurements indicate that the phase coherence of the conduction band states is less than one lattice spacing. Some remaining questions regarding the DOS are briefly presented. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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