Current–voltage characterizations and photovoltaic properties of Se80Te15Ge5/p-Si heterojunction
| Autor: | A.S. Farid, H. A. M. Ali, M.M. El-Nahass |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Equivalent series resistance business.industry Heterojunction 02 engineering and technology General Chemistry Substrate (electronics) Atmospheric temperature range 021001 nanoscience & nanotechnology 01 natural sciences law.invention Rectification law 0103 physical sciences Solar cell Optoelectronics General Materials Science Thin film 0210 nano-technology business Diode |
| Zdroj: | Applied Physics A. 126 |
| ISSN: | 1432-0630 0947-8396 |
| DOI: | 10.1007/s00339-020-03502-9 |
| Popis: | Thin films of Se80Te15Ge5 were prepared by thermal evaporation technique onto a single-crystal p-Si substrate, and Au/Se80Te15Ge5/p-Si/Al heterojunction was obtained. The current–voltage characteristics of the junction in dark were evaluated in temperature range of 303–343 K and the voltage applied ranged from − 2 to + 2 V. It was found that the junction exhibits diode behavior with calculation for some diode parameters as rectification ratio, ideality factor(m), series resistance (Rs) and shunt resistance (Rsh). From the I–V characteristic curves of Au/Se80Te15Ge5/p-Si/Al, the operating mechanism was examined in both forward and reverse directions of the junction. The photovoltaic properties of the Au/Se80Te15Ge5/p-Si/Al under illumination of white light were investigated. The efficiency of the cell estimated and has a value of 3.68. |
| Databáze: | OpenAIRE |
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