Realization of band gap shrinkage to the spectral characteristics of high-luminous-efficiency 658 nm AlGaInP/GaInP multiple quantum well lasers at room temperatures
| Autor: | Thoalfiqar A. Zaker, Santosh Chackrabarti, Aurangzeb Khurram Hafiz, Rayees Ahmad Zargar, Jyoti Bansal |
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| Rok vydání: | 2016 |
| Předmět: |
Photoluminescence
Materials science Band gap 02 engineering and technology 01 natural sciences law.invention Inorganic Chemistry law Electrical and Electronic Engineering Physical and Theoretical Chemistry Spectroscopy business.industry 010401 analytical chemistry Organic Chemistry 021001 nanoscience & nanotechnology Laser Atomic and Molecular Physics and Optics 0104 chemical sciences Electronic Optical and Magnetic Materials Full width at half maximum Wavelength Density of states Optoelectronics Direct and indirect band gaps Atomic physics 0210 nano-technology business Luminous efficacy |
| Zdroj: | Optical Materials. 58:426-431 |
| ISSN: | 0925-3467 |
| DOI: | 10.1016/j.optmat.2016.06.001 |
| Popis: | The temperature dependent spectral shifts in 658 nm AlGaInP multiple quantum well (MQW) red laser diodes due to band gap narrowing at room temperatures (5 °C 45 °C) is reported. The density of states effective mass approximation and the conduction band effective mass approximation are employed to formulate the carrier concentrations. The spectral shift mechanism is explored with a threshold current density of 42.28 kA/cm 2 and a good characteristic temperature of 149 K. The photoluminescence (PL) peak intensity shifts towards the higher wavelength(red shift) and the full width at half maximum (FWHM) increases with the increase in temperature. The band gap narrowing value determined by a simple formula amounts to 67.4 meV and displays N 1/3 dependence at higher densities. The carrier density dependence conveys that the red shift of the spectral emission is due to band gap narrowing. |
| Databáze: | OpenAIRE |
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