Design of a 22-nm FinFET-Based SRAM With Read Buffer for Near-Threshold Voltage Operation
| Autor: | Hanwool Jeong, Juhyun Park, Seong-Ook Jung, Joseph Wang, Younghwi Yang, Seung Chul Song, Geoffrey Yeap |
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| Rok vydání: | 2015 |
| Předmět: | |
| Zdroj: | IEEE Transactions on Electron Devices. 62:1698-1704 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2015.2420681 |
| Popis: | A near-threshold voltage ( $V_{{\rm {th}}}$ ) operation circuit is important for both energy- and performance-constrained applications. The conventional 6-T SRAM bit-cell designed for super- $V_{{\rm {th}}}$ operation cannot achieve the target SRAM bit-cell margins such as the hold stability, read stability, and write ability margins in the near- $V_{{\rm {th}}}$ region. The recently proposed SRAM bit-cell s with read buffer suffer from the problems of low read 0 sensing margin and large read 1 sensing time in the near- $V_{{\rm {th}}}$ region. This paper proposes a read buffer with adjusted the number of fins or $V_{{\rm {th}}}$ to resolve the problems in the near- $V_{{\rm {th}}}$ region. This paper also proposes a design method for pull-up, pull-down, and pass-gate transistors to achieve the target hold stability and presents an effective write assist circuit to achieve the target write ability in the near- $V_{{\rm {th}}}$ region. |
| Databáze: | OpenAIRE |
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