Gigahertz logic gates based on InP-MISFET's with minimal drain current drift

Autor:	M.A. Fathimulla, D. Gutierrez, K.P. Pande, L. Messick
Rok vydání:	1986
Předmět:	Digital electronics Materials science business.industry Transistor Electrical engineering NOR logic Electronic Optical and Magnetic Materials PMOS logic law.invention law Logic gate Optoelectronics Electrical and Electronic Engineering business MISFET NMOS logic Electronic circuit
Zdroj:	IEEE Electron Device Letters. 7:407-409
ISSN:	0741-3106
DOI:	10.1109/edl.1986.26418
Popis:	Three-input AND/NOR logic gates based on 3-µm overlapping gate InP-MISFET technology were fabricated and clocked at 1 GHz. The logic gates showed a propagation delay of ∼500-700 pS/gate for a channel length of 1.5 µm. Such high-speed performance was obtainable as a result of a novel process that was used in the fabrication of the MISFET's. The process included the saturation of InP surface with phosphorus vapor and growth of a P 2 O x N 1-x interfacial layer followed by the deposition of an SiO 2 gate insulator. MISFET's that were utilized in the logic gates showed a channel mobility of ∼3700 cm2/V.s and less than 3-percent drain current drift.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5599a29b12cea7fb850c51f70e99ee26 https://doi.org/10.1109/edl.1986.26418 Zobrazit plný text záznamu