Interface Properties of the Two Step Oxide Layers by UV Light Excited Ozone Silicon Oxidation and Chemical Vapor Deposition (CVD)-SiO2 Film

Autor:	Naoto Kameda, Tomoharu Ushiyama, Tetsuya Nishiguchi, Yoshiki Morikawa, Mitsuru Kekura, Shingo Ichimura, Hidehiko Nonaka
Rok vydání:	2010
Předmět:	Materials science Ozone Fabrication Oxide Analytical chemistry Surfaces and Interfaces Chemical vapor deposition chemistry.chemical_compound chemistry Excited state Deposition (phase transition) General Materials Science Irradiation Instrumentation Buffered oxide etch Spectroscopy
Zdroj:	Journal of the Vacuum Society of Japan. 53:230-233
ISSN:	1882-4749 1882-2398
Popis:	SiO2 film was made on Si(100) by two-step film growth process at 100°C to improve the interface properties. The first part of the process is the direct Si oxidation using UV-excited ozone (O(1D)), which is generated by the UV irradiation to high concentrated (>90%) ozone gas. In the second part, O(1D) and Hexamethyldisilazane chemical vopor deposition (CVD)(O(1D)-CVD) process is used. The SiO2 film thickness of the direct Si oxidation for 10 min. in the two-step SiO2 film was estimated to be about 3.2 nm from the etching rate in change a buffered HF solution. Interface trap density Dit of the two-step SiO2 film with direct Si oxidation of 10 min. is almost equal to that of Si direct oxidation film alone. This result indicates that two-step oxidation process can be applied for the practical fabrication.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5598fbfe8ee69315a46e48ecd6f07c85 https://doi.org/10.3131/jvsj2.53.230 Zobrazit plný text záznamu