Hf-sputtered indium oxide films doped with tin

Autor:	J. Pickl, Horst Hoffmann, M. Schmidt, D. Krause
Rok vydání:	1978
Předmět:	Electron mobility Materials science Argon Doping General Engineering Analytical chemistry Oxide chemistry.chemical_element General Chemistry Conductivity chemistry.chemical_compound chemistry Sputtering General Materials Science Tin Indium
Zdroj:	Applied Physics. 16:239-246
ISSN:	1432-0630 0340-3793
DOI:	10.1007/bf00885119
Popis:	Indium oxide films doped with tin (ITO-films) have been hf-sputtered from an 80 at-%In2O3/20 at-%SnO2 target onto glass substrates. The sputter atmosphere contained mainly argon (10−2Torr) with addition of oxygen (0≦p O 2≦2·10−2Torr). The sputtered films aren-conductors. The conductivity and density of charge carriers depend on the oxygen content of the sputter gas. They could be varied by two orders of magnitude. In air or in oxygen atmosphere the films oxidize at the surface and for a certain depth beneath the surface, thus decreasing the conductivity. The Hall mobility of the sputtered films is smaller (≈10 cm2V−1 s−1) than one observes at ITO films produced by CVD sparaying or other methods. The conductivity of as sputtered films approached maximum values of about 1000Ώ−1cm−1.
Databáze:	OpenAIRE
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