Mechanical properties of PECVD a-SiC:H thin films prepared from methyltrichlorosilane

Autor: A.I. Stegniy, L.A. Ivashchenko, P.L. Skrynskyy, O. K. Porada, Sergey Dub, Volodymyr Ivashchenko
Rok vydání: 2006
Předmět:
Zdroj: Surface and Coatings Technology. 200:6533-6537
ISSN: 0257-8972
Popis: PECVD amorphous hydrogenated silicon carbide (a-SiC:H) thin films have been deposited from methyltrichlorosilane (MTCS) onto (100) Si substrates varying a substrate temperature ( T S ) from 200 to 600 °C. The use of MTCS as a precursor allows us to decrease the cost of the process and make it more environment-friendly as compared with the traditional silane–methane mixture. Infrared spectra of the high-temperature films point to an increase in the Si–C bond density and a decrease in the Si–H and C–H bond densities, although the noticeable traces of C–H fragments are detected. An increase in T S leads to the enhancement of both the nanohardness ( H ) and elastic modulus ( E ). The values of H and E reach as high as 21 and 184 GPa, respectively, at T S = 600 °C. The films deposited at 300–400 °C exhibit the highest abrasive wear resistance. X-Ray diffraction analysis shows that the above a-SiC:H films can contain small crystalline (6H-SiC, 3C-SiC) islets in the amorphous matrix. Our findings show that wear resistance of a-SiC:H films does not always correlate with hardness and elastic modulus.
Databáze: OpenAIRE