Mechanical properties of PECVD a-SiC:H thin films prepared from methyltrichlorosilane
Autor: | A.I. Stegniy, L.A. Ivashchenko, P.L. Skrynskyy, O. K. Porada, Sergey Dub, Volodymyr Ivashchenko |
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Rok vydání: | 2006 |
Předmět: |
Materials science
Analytical chemistry Infrared spectroscopy Surfaces and Interfaces General Chemistry Substrate (electronics) Condensed Matter Physics Surfaces Coatings and Films Methyltrichlorosilane Amorphous solid chemistry.chemical_compound chemistry Plasma-enhanced chemical vapor deposition Materials Chemistry Silicon carbide Thin film Composite material Elastic modulus |
Zdroj: | Surface and Coatings Technology. 200:6533-6537 |
ISSN: | 0257-8972 |
Popis: | PECVD amorphous hydrogenated silicon carbide (a-SiC:H) thin films have been deposited from methyltrichlorosilane (MTCS) onto (100) Si substrates varying a substrate temperature ( T S ) from 200 to 600 °C. The use of MTCS as a precursor allows us to decrease the cost of the process and make it more environment-friendly as compared with the traditional silane–methane mixture. Infrared spectra of the high-temperature films point to an increase in the Si–C bond density and a decrease in the Si–H and C–H bond densities, although the noticeable traces of C–H fragments are detected. An increase in T S leads to the enhancement of both the nanohardness ( H ) and elastic modulus ( E ). The values of H and E reach as high as 21 and 184 GPa, respectively, at T S = 600 °C. The films deposited at 300–400 °C exhibit the highest abrasive wear resistance. X-Ray diffraction analysis shows that the above a-SiC:H films can contain small crystalline (6H-SiC, 3C-SiC) islets in the amorphous matrix. Our findings show that wear resistance of a-SiC:H films does not always correlate with hardness and elastic modulus. |
Databáze: | OpenAIRE |
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