Single and Coupled Microcavities — AlAs/GaAs DBR Pillars and GaAs Pyramids
| Autor: | M. Karl, F. Perez-Willard, T. Passow, J. Hawecker, C. Klingshirn, Michael Hetterich, J. Lupaca-Schomber, Dagmar Gerthsen, Heinz Kalt, Wolfgang Löffler, S. Li |
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| Rok vydání: | 2007 |
| Předmět: |
Coupling
Materials science business.industry Physics::Optics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Epitaxy Isotropic etching Gallium arsenide Condensed Matter::Materials Science Resonator chemistry.chemical_compound Optics Light source chemistry Quantum dot Optoelectronics business Lithography |
| Zdroj: | AIP Conference Proceedings. |
| ISSN: | 0094-243X |
| DOI: | 10.1063/1.2730296 |
| Popis: | We discuss two different types of GaAs‐based microcavities: Single and coupled pillar‐type resonators with AlAs/GaAs distributed Bragg reflectors (DBRs) were fabricated by means of molecular‐beam epitaxy (MBE) and focussed‐ion‐beam (FIB) milling. The dependence of the observed cavity modes on the pillar diameter and on the coupling bridge were investigated. Additionally, we present an alternative cavity design consisting of a pyramidal GaAs resonator placed on top of an AlAs/GaAs DBR. Single or even coupled pyramids were achieved by combining electron‐beam lithography and wet chemical etching. In(Ga)As quantum dots (QDs) served as a broad‐band light source at around 950 nm. |
| Databáze: | OpenAIRE |
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