II-VI Narrow Bandgap Semiconductors: Optoelectronics
| Autor: | Ian M. Baker |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Band gap Infrared Detector 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Photodiode law.invention Electron avalanche Semiconductor Operating temperature law 0103 physical sciences Optoelectronics Infrared detector 0210 nano-technology business |
| Zdroj: | Springer Handbook of Electronic and Photonic Materials ISBN: 9783319489315 |
| Popis: | The main purpose of this chapter is to describe the applications and technology of II–VI narrow bandgap semiconductors, focussing on HgCdTe for infrared sensors. It provides a historical record of the development HgCdTe through photoconductors and photodiode arrays. The solid-state physics of HgCdTe is described to provide a foundation to explain the main crystal growth processes and device technologies. It concludes with a review of the research and development programs in centers around the world on third-generation infrared detector technology (so-called GEN III detectors). These include small pixel technology, higher operating temperature (HOT) device structures, two-color array technology, electron avalanche photodiodes (e-APDs), multifunctional HgCdTe detectors, retina level processing, and future trends for HgCdTe infrared detector arrays. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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