Shallow As dose measurements of patterned wafers with secondary ion mass spectrometry and low energy electron induced x-ray emission spectroscopy
| Autor: | V. Paret, C. Hombourger, R. Benbalagh, J. Choi, M. Schuhmacher, H.-U. Ehrke, N. Loibl, N. Morel, F. Horreard, M. P. Moret |
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| Rok vydání: | 2010 |
| Předmět: |
Static secondary-ion mass spectrometry
Materials science business.product_category Dopant Process Chemistry and Technology Analytical chemistry Dose profile Surfaces Coatings and Films Electronic Optical and Magnetic Materials Secondary ion mass spectrometry Materials Chemistry Dosimetry Die (manufacturing) Wafer Emission spectrum Electrical and Electronic Engineering business Instrumentation |
| Zdroj: | Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:C1C54-C1C58 |
| ISSN: | 2166-2754 2166-2746 |
| DOI: | 10.1116/1.3253352 |
| Popis: | Secondary ion mass spectrometry (SIMS) and low energy electron induced x-ray emission spectroscopy (LEXES) are both well established technologies. SIMS tools are the ultimate reference for depth profiling and direct measurement of dopants with highest sensitivity and dynamic range. The LEXES-based shallow probe is a versatile, sensitive, in-line metrology tool for thin layer elemental composition and dopant dosimetry in semiconductor production. In this contribution, the ability of LEXES and SIMS techniques to differentiate nominal dose differences among three different 300mm patterned wafers are compared. In each die, several test pads were available for dose measurements. Five neighboring dies were measured by LEXES and afterward by SIMS. The repeatability measurements of both techniques ( |
| Databáze: | OpenAIRE |
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