Annealing properties of defects during Si-on-insulator fabrication by low-dose oxygen implantation studied by monoenergetic positron beams

Autor:	Tomohisa Mikado, Atsushi Ogura, Akira Uedono, Ryoichi Suzuki, Toshiyuki Ohdaira, Haruhiko Ono, Shoichiro Tanigawa
Rok vydání:	2000
Předmět:	Ion implantation Materials science Silicon chemistry Annealing (metallurgy) Vacancy defect Annihilation radiation General Physics and Astronomy chemistry.chemical_element Silicon on insulator Atmospheric temperature range Atomic physics Doppler broadening
Zdroj:	Journal of Applied Physics. 87:1659-1665
ISSN:	1089-7550 0021-8979
Popis:	The depth distributions and species of defects in Si on insulator (SOI) fabricated by low-dose oxygen implantation were determined from measurements of Doppler broadening spectra of the annihilation radiation and lifetime spectra of positrons. The temperature range for the annealing of the defects in the subsurface region (
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::55676c223773accc00f66cbcccc5a5d3 https://doi.org/10.1063/1.372074 Zobrazit plný text záznamu