DLTS Studies of bias dependence of defects in silicon NPN bipolar junction transistor irradiated by heavy ions

Autor:	Jianqun Yang, Hongbin Geng, Liyi Xiao, Xingji Li, Erming Rui, Chaoming Liu
Rok vydání:	2012
Předmět:	Physics Nuclear and High Energy Physics Deep-level transient spectroscopy Silicon business.industry Transistor Bipolar junction transistor chemistry.chemical_element Activation energy Ion law.invention chemistry law Radiation damage Optoelectronics Irradiation business Instrumentation
Zdroj:	Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 688:7-10
ISSN:	0168-9002
DOI:	10.1016/j.nima.2012.05.073
Popis:	The characteristic degradation in silicon NPN bipolar junction transistors (BJTs) of 3DG130 type is examined under the irradiation with 35 MeV silicon (Si) ions under forward, grounded and reverse bias conditions, respectively. Different electrical parameters were in-situ measured during the exposure under each bias condition. Using deep level transient spectroscopy (DLTS), deep level defects in the base-collector junction of 3DG130 transistors under various bias conditions are measured after irradiation. The activation energy, capture cross section and concentration of observed deep level defects are measured using DLTS technique. Based on the in situ electrical measurement and DLTS spectra, it is clearly that the bias conditions could affect the concentration of deep level defects, and the displacement damage induced by heavy ions.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::555ed62232c3bca9b342d0c0a4be027b https://doi.org/10.1016/j.nima.2012.05.073 Zobrazit plný text záznamu Full Text from ScienceDirect