| Autor: |
Arne Knauer, R. Staske, J. Maege, Guenther Traenkle, G. Erbert, K. Vogel, Juergen Sebastian, Frank Bugge, Hans Wenzel |
| Rok vydání: |
2000 |
| Předmět: |
|
| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| DOI: |
10.1117/12.382104 |
| Popis: |
Tensile-strained GaAsP quantum wells (QWs) embedded in AJGaAs waveguide and cladding layers are an alternativeapproach for the wavelength range 700-800 nm. We will present a detailed experimental and theoretical study of thedependence of the threshold current on the thickness and the strain of the QW for 800 nm. The optimum thickness of theGaAsP QW for a minimum threshold current density is about 14 nm and is thus much larger than for compressively strainedQWs. Higher characteristic temperatures T0 can be obtained with even thicker QWs. In order to achieve high optical outputpowers and good fiber coupling efficiencies, we used broad waveguides with weak optical confinement and small far fielddivergence. We prepared two structures with 1 tm thick A1065Ga35As (structure A) and 2 tm thick Al045Ga55As (structureB) waveguides, respectively. For structure B, the thickness of the Al070Ga30As cladding layers must be carefully optimizedin order to suppress higher-order transverse modes. Whereas structure B yields a higher maximum cw output power ofAR/HR coated broad-area devices, structure A shows a better high-temperature behavior. Aging tests performed at 2 W (100j.m stripe width) and 25°C |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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