Electronic states created inp‐Si subjected to plasma etching: The role of inherent impurities, point defects, and hydrogen

Autor:	P. I. Mikulan, Osama O. Awadelkarim, R. A. Ditizio, Y.D. Chan, Stephen J. Fonash, K. A. Reinhardt, T. Gu
Rok vydání:	1993
Předmět:	Plasma etching Physics and Astronomy (miscellaneous) Silicon Hydrogen Binding energy technology industry and agriculture Analytical chemistry chemistry.chemical_element Substrate (electronics) Crystallographic defect Molecular physics chemistry Etching (microfabrication) Reactive-ion etching
Zdroj:	Applied Physics Letters. 62:958-960
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.108532
Popis:	Reactive ion etching and magnetically enhanced reactive ion etching with CHF3/O2 are employed to remove SiO2 from boron‐doped Si substrates. Etch‐induced gap states in the substrate are monitored using deep‐level transient spectroscopy. The dominant state is found to be a donor with a hole binding energy of 0.36 eV. The state has been identified as that of the carbon‐interstitial oxygen‐interstitial pair. The depth profile of the pair is determined by two competing mechanisms: the pair generation and its electrical deactivation by atomic hydrogen. The latter process is especially prevalent in the presence of a magnetic field.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::555c4ba99e2dcde2f2b562b532e0129e https://doi.org/10.1063/1.108532 Zobrazit plný text záznamu