Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPtx Nanocrystals for Resistive Random Access Memory Applications
| Autor: | Zheng-Yi Cao, Di Wu, Aidong Li, Da-Peng Cui, Xu Qian, Lin Zhu, Lai-Guo Wang |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Nanocomposite Materials science business.industry Oxide chemistry.chemical_element Nanotechnology 02 engineering and technology 021001 nanoscience & nanotechnology Thermal conduction 01 natural sciences Resistive random-access memory chemistry.chemical_compound Atomic layer deposition chemistry Nanocrystal 0103 physical sciences Optoelectronics General Materials Science 0210 nano-technology Tin business Layer (electronics) |
| Zdroj: | ACS Applied Materials & Interfaces. 9:6634-6643 |
| ISSN: | 1944-8252 1944-8244 |
| DOI: | 10.1021/acsami.6b16098 |
| Popis: | Al2O3- or HfO2-based nanocomposite structures with embedded CoPtx nanocrystals (NCs) on TiN-coated Si substrates have been prepared by combination of thermal atomic layer deposition (ALD) and plasma-enhanced ALD for resistive random access memory (RRAM) applications. The impact of CoPtx NCs and their average size/density on the resistive switching properties has been explored. Compared to the control sample without CoPtx NCs, ALD-derived Pt/oxide/100 cycle-CoPtx NCs/TiN/SiO2/Si exhibits a typical bipolar, reliable, and reproducible resistive switching behavior, such as sharp distribution of RRAM parameters, smaller set/reset voltages, stable resistance ratio (≥102) of OFF/ON states, better switching endurance up to 104 cycles, and longer data retention over 105 s. The possible resistive switching mechanism based on nanocomposite structures of oxide/CoPtx NCs has been proposed. The dominant conduction mechanisms in low- and high-resistance states of oxide-based device units with embedded CoPtx NCs are Ohmi... |
| Databáze: | OpenAIRE |
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