Exciton spectroscopy with spatially separated electron and hole in Ge/Si heterostructure with germanium quantum dots
| Autor: | S. I. Pokutnyi |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) Band gap Exciton General Physics and Astronomy Heterojunction 02 engineering and technology Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology 01 natural sciences Molecular physics Atomic electron transition Quantum dot 0103 physical sciences 0210 nano-technology Stationary state Surface states |
| Zdroj: | Low Temperature Physics. 44:819-823 |
| ISSN: | 1090-6517 1063-777X |
| DOI: | 10.1063/1.5049165 |
| Popis: | It is shown that taking into account the centrifugal energy in the Hamiltonian of an exciton with spatially separated electron and hole (the hole moves in the germanium quantum dot and the electron is localized over the spherical interface of the silicon quantum dot matrix) leads to the appearance of quasistationary states in the zone of surface exciton states, which transform into stationary states with increasing quantum dot radius. It is determined that the absorption spectra of the nanosystem interband consist of energy bands that are formed by electron transitions between quasistationary and stationary states, and the intraband absorption spectra consist of zones formed by electron transitions between stationary states. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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