| Autor: |
Y.C. Chen, C. K. Pao, C.S. Wu, M. Cole, T.C. Cisco, Z. Bardai, T.A. Midford, L.D. Hou |
| Rok vydání: |
2002 |
| Předmět: |
|
| Zdroj: |
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995. |
| DOI: |
10.1109/gaas.1995.529011 |
| Popis: |
A systematic experiment was designed and implemented to optimize the 0.25 /spl mu/m gate InGaAs/AlGaAs pseudomorphic HEMT for the fabrication of high power X-band monolithic amplifiers. The material structure and gate recess process were engineered such that the device breakdown voltage was optimized without sacrificing gain and efficiency. A two-stage high power X-band monolithic amplifier based on the optimized device has been developed. When the amplifier was operated at V/sub ds/=10 V, an output power of 9 W was achieved across the 7 to 10 GHz frequency range. A peak saturated output power of 10 W, corresponding to a power density of 1 W/mm, occurred at 8.5 GHz. When biased at 7 V, the amplifier generated a peak power of 6.7 W with an associated power added efficiency of 40% at 8.5 GHz. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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