Characterization of PECVD UV-Transparent Silicon Oxynitride for Passivation of Non-Flash Memory Devices

Autor:	Shou-Mian Chen, Zheng-Jun Hu
Rok vydání:	2010
Předmět:	chemistry.chemical_compound Materials science Silicon oxynitride Passivation chemistry Plasma-enhanced chemical vapor deposition business.industry Optoelectronics business Flash memory Characterization (materials science)
Zdroj:	ECS Transactions. 27:675-678
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.3360693
Popis:	Conventional silicon oxynitride SiON, superior to SiN due to its lower stress and better impervious barrier properties to SiO2, has found only limited application as the passivation layer for non-volatile memory due to its opacity to ultraviolet (UV) light. To tackle this issue, a UV-transparent silicon oxynitride process is developed. A full factorial design of experiment (DOE) is used to study the UV-transmittance of the film from the process parameters. In addition, FT-IR is performed to characterize the Si-O-N bonds, pin-hole test for the film integrity, and varying UV erase time for the corresponding device performance.
Databáze:	OpenAIRE
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