Characterization of the interface between Al–1% Si and rapidly annealed Mo–polycide
| Autor: | R. P. Beerkens, I. D. Calder, V. Q. Ho |
|---|---|
| Rok vydání: | 1986 |
| Předmět: |
Auger electron spectroscopy
Materials science Annealing (metallurgy) Contact resistance Metallurgy Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Tungsten Condensed Matter Physics Surfaces Coatings and Films chemistry.chemical_compound chemistry Sputtering Silicide Polycide Forming gas |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 4:794-798 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.573817 |
| Popis: | In this paper, the results of an investigation of the Mo–polycide/Al–1% Si interface characteristics are reported. Mo–polycide was produced by sputtering a 0.3 μm MoSi2.2 film on 0.3 μm of phosphorus doped poly‐Si. The composite layer was rapidly annealed at 1100 °C for 10 s with a tungsten halogen lamp. A 0.25 μm Al–1% Si film was sputtered onto the Mo–polycide and then sintered in forming gas (10% H2, 90% N2) for 45 min at temperatures ranging from 400 to 550 °C. RBS and AES analysis indicated that the Al–1% Si/MoSi2 interface was stable up to 500 °C. Al and Si interdiffusion across the silicide layer was only observed at 550 °C. After a sinter at 450 °C, an abrupt interface between MoSi2 and Al–Si was observed by cross‐sectional TEM and a contact resistance of 0.5 Ω was measured for 5×5 μm2 contact windows. This was approximately seven times lower than the Al/n+ poly‐Si contact resistance.In this paper, the results of an investigation of the Mo–polycide/Al–1% Si interface characteristics are reported. Mo–polycide was produced by sputtering a 0.3 μm MoSi2.2 film on 0.3 μm of phosphorus doped poly‐Si. The composite layer was rapidly annealed at 1100 °C for 10 s with a tungsten halogen lamp. A 0.25 μm Al–1% Si film was sputtered onto the Mo–polycide and then sintered in forming gas (10% H2, 90% N2) for 45 min at temperatures ranging from 400 to 550 °C. RBS and AES analysis indicated that the Al–1% Si/MoSi2 interface was stable up to 500 °C. Al and Si interdiffusion across the silicide layer was only observed at 550 °C. After a sinter at 450 °C, an abrupt interface between MoSi2 and Al–Si was observed by cross‐sectional TEM and a contact resistance of 0.5 Ω was measured for 5×5 μm2 contact windows. This was approximately seven times lower than the Al/n+ poly‐Si contact resistance. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|