Physical properties of Bi2Te2.85Se0.15 single crystals doped with Cu, Cd, In, Ge, S, or Se
| Autor: | P. P. Konstantinov, T. E. Svechnikova, G. T. Alekseeva |
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| Rok vydání: | 2000 |
| Předmět: |
Dopant
Chemistry General Chemical Engineering Inorganic chemistry Doping Metals and Alloys Analytical chemistry Atmospheric temperature range Inorganic Chemistry Thermoelectric figure of merit Thermal conductivity Flexural strength Electrical resistivity and conductivity Seebeck coefficient Materials Chemistry |
| Zdroj: | Inorganic Materials. 36:556-560 |
| ISSN: | 1608-3172 0020-1685 |
| DOI: | 10.1007/bf02757952 |
| Popis: | Bi2Te2.85Se0.15 crystals doped with Cu, Cd, In, Ge, S, or Se were grown by the floating-crucible technique. The effective segregation coefficients for the dopants were determined. The thermoelectric power, electrical conductivity, and thermal conductivity of the samples were measured in the temperature range from 77 to 350 K. The effects of the dopants studied on the temperature dependences of the electrical properties and thermoelectric figure of merit were examined. The bending strength of the doped crystals was measured. |
| Databáze: | OpenAIRE |
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