Highly Efficient Ka-band (33 GHz - 36 GHz) GaN MMIC Power Amplifier with >58.5% PAE

Autor:	Joe Tai, Miroslav Micovic, D. Regan, Joel C. Wong, Hasan Sharifi
Rok vydání:	2019
Předmět:	Power-added efficiency Materials science business.industry Amplifier Extremely high frequency Optoelectronics Continuous wave Ka band High-electron-mobility transistor business Monolithic microwave integrated circuit Power (physics)
Zdroj:	BCICTS
DOI:	10.1109/bcicts45179.2019.8972773
Popis:	We report the development of high efficiency Ka-band (33 GHz – 36 GHz) MMIC amplifiers in a highly scaled 40nm HRL’s T4A GaN MMIC process. The reported two stage power amplifiers have peak power added efficiency (PAE) of 58.5% with associated gain of 11.9 dB and associated output power of 24.4 dBm measured at a frequency of 34 GHz in continuous wave (CW) mode. The exceptionally high efficiency of reported MMICs is a result of outstanding device characteristics of highly scaled GaN HEMTs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::553fad1db4344f2c697c559ba0a0fe1d https://doi.org/10.1109/bcicts45179.2019.8972773 Zobrazit plný text záznamu