Theoretical Explanation of the Effect of a Decrease in the Si(111) Plasmon Energy during the Implantation of Ions with a Large Dose

Autor:	S. T. Abraeva, A. K. Tashatov, B. D. Igamov, A. S. Rysbaev, J. B. Khujaniyozov, M. T. Normuradov
Rok vydání:	2020
Předmět:	Valence (chemistry) Materials science Electron Fermi gas Valence electron Plasma oscillation Molecular physics Plasmon Excitation Surfaces Coatings and Films Ion
Zdroj:	Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 14:816-822
ISSN:	1819-7094 1027-4510
DOI:	10.1134/s102745102004031x
Popis:	Theoretical explanation of the experimentally discovered effect of a decrease in the excitation energy of surface and volume plasma oscillations of valence Si (111) electrons during the implantation of Ba and alkaline-element ions with a large dose of D > 1016 cm–2 is presented in this paper. On the basis of a two-fluid model of the electron gas, the observed effect of a decrease in the Si(111) plasmon energy is explained by the strong damping of valence electron oscillations because of disordering of the Si(111) crystal structure up to full amorphization.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5529b2102360eda22bdbdb5b3b57486c https://doi.org/10.1134/s102745102004031x Zobrazit plný text záznamu Full text from SpringerLink