Dose dependent variations of carrier recombination in silicon irradiated by high energy electrons

Autor:	E. Gaubas
Rok vydání:	2007
Předmět:	High energy Materials science Silicon chemistry Radiochemistry Dose dependence General Physics and Astronomy chemistry.chemical_element Irradiation Electron Atomic physics Recombination
Zdroj:	Lithuanian Journal of Physics. 47:457-460
ISSN:	1648-8504
DOI:	10.3952/lithjphys.47409
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5522527011a7ccaf69a89af91036a6e0 https://doi.org/10.3952/lithjphys.47409 Zobrazit plný text záznamu