Ohmic Contact Formation onp-type GaN Using Pd/Mo Electrode without Alloying Process
| Autor: | Masanori Hangyo, Hiroshi Harima, Kenji Kisoda, Eiji Kurimoto, Masataka Taneya, Kunihiro Takatani, Masaya Ishida |
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| Rok vydání: | 2004 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Hydrogen Scattering Annealing (metallurgy) Metallurgy Contact resistance General Engineering Analytical chemistry General Physics and Astronomy chemistry.chemical_element symbols.namesake chemistry Electrode symbols Ohmic contact Raman scattering |
| Zdroj: | Japanese Journal of Applied Physics. 43:6988-6991 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.43.6988 |
| Popis: | Ohmic contact formation on a p-GaN layer with a specific contact resistance of ρc=5×10-4 Ωcm2 has been achieved using a Pd/Mo electrode without the use of an alloying process. ρc was reduced to 2×10-4 Ωcm2 by annealing in vacuum at 500°C. The Pd/Mo electrode showed much improved ohmic-contact characteristics than the Ni/Mo electrode. Characterization by micro-Raman scattering revealed that the hole concentration increased in the p-GaN layer just under the Pd/Mo electrode with increasing annealing temperature. This cannot be explained by the removal of hydrogen. A decrease in the density of hole traps and an increase in the density of active acceptors, such as Ga vacancies, are considered to be the most significant contributing factors. |
| Databáze: | OpenAIRE |
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