Enhanced electrical properties of pentacene-based organic thin-film transistors by modifying the gate insulator surface
| Autor: | J.X. Tang, Michael C. Y. Chan, Chun-Sing Lee, Shuit-Tong Lee |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Electron mobility
business.industry Chemistry Gate dielectric Transistor General Physics and Astronomy Nanotechnology Surfaces and Interfaces General Chemistry Condensed Matter Physics Surfaces Coatings and Films Threshold voltage law.invention Pentacene chemistry.chemical_compound law Thin-film transistor Optoelectronics Thin film business Deposition (law) |
| Zdroj: | Applied Surface Science. 254:7688-7692 |
| ISSN: | 0169-4332 |
| Popis: | A reliable surface treatment for the pentacene/gate dielectric interface was developed to enhance the electrical transport properties of organic thin-film transistors (OTFTs). Plasma-polymerized fluorocarbon (CFx) film was deposited onto the SiO2 gate dielectric prior to pentacene deposition, resulting in a dramatic increase of the field-effect mobility from 0.015 cm2/(V s) to 0.22 cm2/(V s), and a threshold voltage reduction from −14.0 V to −9.9 V. The observed carrier mobility increase by a factor of 10 in the resulting OTFTs is associated with various growth behaviors of polycrystalline pentacene thin films on different substrates, where a pronounced morphological change occurs in the first few molecular layers but the similar morphologies in the upper layers. The accompanying threshold voltage variation suggests that hole accumulation in the conduction channel-induced weak charge transfer between pentacene and CFx. |
| Databáze: | OpenAIRE |
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