Photoluminescence Study of Plasma-Induced Damage of GaInN Single Quantum Well

Autor:	Atsushi A. Yamaguchi, Kenji Ishikawa, Shigetaka Tomiya, Tetsuya Tatsumi, Masaki Minami, Michiru Kamada, Masaru Hori, Shouichiro Izumi
Rok vydání:	2013
Předmět:	Photoluminescence Materials science Plasma etching business.industry General Engineering General Physics and Astronomy Plasma Transmission electron microscopy Etching (microfabrication) Optoelectronics business Recombination Intensity (heat transfer) Quantum well
Zdroj:	Japanese Journal of Applied Physics. 52:08JL09
ISSN:	1347-4065 0021-4922
DOI:	10.7567/jjap.52.08jl09
Popis:	Plasma-induced damage (PID) due to Cl2/SiCl4/Ar plasma etching of the GaN capping layer (CAP)/GaInN single quantum well (SQW)/GaN structure was investigated by conventional photoluminescence (PL), transmission electron microscopy (TEM), and time-resolved and temperature-dependent photoluminescence (TRPL). SQW PL intensity remained constant initially, although plasma etching of the CAP layer proceeded, but when the etching thickness reached a certain amount (∼60 nm above the SQW), PL intensity started to decrease sharply. On the other hand, TEM observations show that the physical damage (structural damage) was limited to the topmost surface region. These findings can be explained by the results of TRPL studies, which revealed that there exist two different causes of PID. One is an increase in the number of nonradiative recombination centers, which mainly affects the PL intensity. The other is an increase in the quantum level fluctuation owing mainly to physical damage.
Databáze:	OpenAIRE
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