| Autor: |
Shih-Wei Chen, Po-Tsang Huang, Wen-Kuan Yeh, Chenming Hu, Chih-Chao Yang, Chia-He Chang, Kuan-Neng Chen, Jia-Min Shieh, Meng-Chyi Wu, Wan-Chi Wu, Chang-Hong Shen, Tung-Ying Hsieh |
| Rok vydání: |
2018 |
| Předmět: |
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| Zdroj: |
2018 IEEE International Electron Devices Meeting (IEDM). |
| Popis: |
A location-controlled-grain technique is presented for fabricating BEOL monolithic 3D FinFET ICs over SiO 2 . The grain-boundary free Si FinFETs thus fabricated exhibit steep sub-threshold swing ( $385\ \mu \mathrm{A}/\mu \mathrm{m}$ ), and high I on /I off (>106). According to simulation, the thickness of the interlayer dielectric plays an important role and shall be thicker than 250nm so that the sequential pulse laser crystallization process does not heat the bottom devices and interconnects to more than 400 °C. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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