ILT approach for compensating 3-D mask effects

Autor: Min-Chun Tsai, Jinyu Zhang, Yan Wang, Zhiping Yu, Wei Xiong
Rok vydání: 2009
Předmět:
Zdroj: Tsinghua Science and Technology. 14:68-74
ISSN: 1007-0214
DOI: 10.1016/s1007-0214(09)70009-4
Popis: As mask features scale to smaller dimensions, the so-called “3-D mask effects” which have mostly been neglected before, become important. This paper properly models the 3-D thick mask effects, and then analyses the object-based inverse lithography technique using a simulated annealing algorithm to determine the mask shapes that produce the desired on-wafer results. Evaluations against rigorous simulations show that the synthesized masks provide good image fidelity up to 0.94, and this approach gives improved accuracy and faster results than existing methods.
Databáze: OpenAIRE