An experimental investigation of the end-hat effects in a crossed-field amplifier via three-dimensional electron density measurements

Autor: J.Z. Ye, T.E. Ruden, R. MacGregor, C. Chan
Rok vydání: 1994
Předmět:
Zdroj: IEEE Transactions on Electron Devices. 41:258-265
ISSN: 0018-9383
Popis: In situ three-dimensional electron density profile measurements have been made for the first time to study the end-hat space-charge region in a crossed-field amplifier. It has been found that a separated electron population exists in that region and is detached from the main beam when the end-hats are biased positively with respect to the sole. An investigation into the vacuum electric field profile and the overall device performance versus end-hat bias has suggested that such an electron population may be caused by a redistribution of the beam electrons by the axial and radial end-hat electric field. >
Databáze: OpenAIRE