Autor: |
J.Z. Ye, T.E. Ruden, R. MacGregor, C. Chan |
Rok vydání: |
1994 |
Předmět: |
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Zdroj: |
IEEE Transactions on Electron Devices. 41:258-265 |
ISSN: |
0018-9383 |
Popis: |
In situ three-dimensional electron density profile measurements have been made for the first time to study the end-hat space-charge region in a crossed-field amplifier. It has been found that a separated electron population exists in that region and is detached from the main beam when the end-hats are biased positively with respect to the sole. An investigation into the vacuum electric field profile and the overall device performance versus end-hat bias has suggested that such an electron population may be caused by a redistribution of the beam electrons by the axial and radial end-hat electric field. > |
Databáze: |
OpenAIRE |
Externí odkaz: |
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