STT-MRAM for Embedded Memory Applications
| Autor: | Zihui Wang, Yiming Huai, Longqian Hu, Xiaojie Hao, Zhiqiang Wei, Dongha Jung, Bing Yen, Jing Zhang, Kimihiro Satoh, Pengfa Xu, Woojin Kim, Lienchang Wang |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Magnetoresistive random-access memory Hardware_MEMORYSTRUCTURES Computer science business.industry Embedded memory 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Tunnel magnetoresistance Embedded system 0103 physical sciences Static random-access memory Data retention 0210 nano-technology business |
| Zdroj: | 2020 IEEE International Memory Workshop (IMW). |
| Popis: | With traditional embedded memories, such as eFlash and SRAM, facing major challenge of scaling beyond 28 nm, STT-MRAM stands out from competing emerging NVM technologies as the preferred technology for both embedded flash and SRAM replacements. Having high data retention, reflow compatibility and high endurance, MRAM is ready for production to replace eFlash at 28 nm node and below. On the other end of the spectrum, by tuning magnetic properties of magnetic tunnel junction storage layers, MRAM can achieve high speed/endurance, and offer higher density compared with embedded SRAM at advance nodes. |
| Databáze: | OpenAIRE |
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