Thin film growth of reactive sputter deposited tungsten–carbon thin films

Autor:	Jeffrey J. Peterson, Jie Li, A. C. Geiculescu, H. J. Rack, Philip D. Rack
Rok vydání:	2001
Předmět:	Sticking coefficient Materials science Metallurgy chemistry.chemical_element Surfaces and Interfaces Tungsten Condensed Matter Physics Surfaces Coatings and Films law.invention Amorphous solid Carbon film chemistry Chemical engineering Sputtering law Crystallization Thin film Carbon
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:62-65
ISSN:	1520-8559 0734-2101
DOI:	10.1116/1.1335684
Popis:	Tungsten–carbon thin films have been reactively sputter deposited in various Ar–CH4 gas mixtures and the growth kinetics of the reactive deposition process have been elucidated. The films are amorphous as-deposited with partial crystallization of W2C and WC occurring following a 1100 °C–1 min rapid thermal anneal. Carbon incorporation within the W–C films is attributed to the flux of CH3 radicals impinging on the growth surface. Although they have a significantly lower concentration (∼0.1%) than the CH4 molecules contained within the plasma, their sticking coefficient is significantly larger than that of CH4. In addition, the change in the incorporation rate of carbon in the W–C films at higher CH4 (and subsequently CH3) concentrations has been shown to be due to the changes in the growth surface; as the CH3 flux increases, the growth surface becomes carbon terminated and decreases the incorporation of carbon because of the low CH3–C sticking coefficient.
Databáze:	OpenAIRE
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