Improvement of the electrical and interfacial propertie of TiN/ZrO2 by a modulated atomic layer deposition process with controlled O3 dosing
| Autor: | Seunghyup Lee, Younsoo Kim, Dokyoung Kim, Hongseon Song, Kijung Yong, Hyung-Suk Jung, Han-jin Lim |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Fabrication Metals and Alloys chemistry.chemical_element 02 engineering and technology Surfaces and Interfaces Dielectric Substrate (electronics) 021001 nanoscience & nanotechnology 01 natural sciences Capacitance Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Crystallinity Capacitor Atomic layer deposition chemistry Chemical engineering law 0103 physical sciences Materials Chemistry 0210 nano-technology Tin |
| Zdroj: | Thin Solid Films. 675:153-159 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2019.02.040 |
| Popis: | In this work, we have studied the atomic layer deposition (ALD) of ZrO2 under various O3 dosing conditions and systematically investigated the interfacial properties of ZrO2/TiN during ALD fabrication using the CpZr(N(CH3)2)3 and O3 reactant combination. In a typical ZrO2 ALD process, the oxidation condition fundamentally determines the interface oxidation and bulk film properties. High oxidation power is required to enhance the crystallinity of the ZrO2 film with low defect densities but inevitably causes the growth of the interfacial oxide, which reduces the dielectric constant of the resulting film. In the current study, we propose a modulated ALD process with controlled O3 dosing to realize the high performance of a metal-insulator-metal (MIM) capacitor device. The initial ALD cycles proceeded with low O3 dosing to suppress the oxidation of the TiN substrate, and the subsequent bulk film was grown with high O3 dosing to improve the crystallinity of the ZrO2. As a result, we achieved a high dielectric constant ZrO2 material with a reduced defect density and a minimum interface capacitance equivalent thickness (CET) of the TiN/ZrO2/TiN MIM capacitor under modulated oxidation conditions. This work provides a useful method to control the interface and bulk properties of dielectric layers at the atomic level. |
| Databáze: | OpenAIRE |
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