Improvement of the Optical and Electrical Performance of GaN-Based Light-Emitting Diodes (LEDs) Using Transferrable ZnSnO3 (ZTO) Microsphere Monolayers
Autor: | Dong Su Shin, Jinsub Park, Do Hyun Kim, Seong Jin Park, Taek Gon Kim |
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Rok vydání: | 2018 |
Předmět: |
Materials science
General Chemical Engineering 02 engineering and technology 01 natural sciences law.invention chemistry.chemical_compound X-ray photoelectron spectroscopy law 0103 physical sciences Monolayer Environmental Chemistry Diode 010302 applied physics Polydimethylsiloxane Renewable Energy Sustainability and the Environment business.industry Extraction (chemistry) General Chemistry 021001 nanoscience & nanotechnology Rubbing chemistry Optoelectronics 0210 nano-technology business Layer (electronics) Light-emitting diode |
Zdroj: | ACS Sustainable Chemistry & Engineering. 6:11547-11554 |
ISSN: | 2168-0485 |
DOI: | 10.1021/acssuschemeng.8b01736 |
Popis: | We report on the formation of transferable microspheres monolayers consisting of ZnSnO3 (ZTO) synthesized via fast ethanol precipitation and their application to GaN-based light-emitting diodes (LEDs) to improve device performance. ZTO microspheres with diameters of 820 ± 20 nm (ZTO-1), 910 ± 10 nm (ZTO-2), and 1200 ± 10 nm (ZTO-3) were synthesized and arrayed to form a monolayer using polydimethylsiloxane (PDMS) and a unidirectional rubbing method. ZTO-1, ZTO-2, and ZTO-3 monolayers exhibited optical transmittance percentages of 94.4%, 92.98%, and 87.09% at 450 nm, respectively. Effects of ZTO monolayers on the light extraction efficiency of LEDs were evaluated using LED chips sized 800 μm × 800 μm. LEDs with a ZTO-3 monolayer as a top layer had a light extraction efficiency of ∼144%, relative to regular LEDs, as well as improved electrical properties, as evidenced by a decrease in Vturn on of ∼0.6 V and a decrease in Ron by 0.036 kΩ. XPS analysis indicated that the improvement in the electrical properti... |
Databáze: | OpenAIRE |
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