Device characteristics of crystalline epitaxial oxides on silicon

Autor:	K. Eisenbeiser, Jay Curless, B.-Y. Nguyen, J. Ramdani, J. Conner, Z. Yu, Ravindranath Droopad, Vidya Kaushik, Corey Overgaard, L. Prabhu, J. Finder
Rok vydání:	2002
Předmět:	Electron mobility Materials science business.industry Gate dielectric Electrical engineering Equivalent oxide thickness Dielectric Amorphous solid chemistry.chemical_compound Tantalum nitride chemistry MOSFET Optoelectronics business Leakage (electronics)
Zdroj:	58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526).
DOI:	10.1109/drc.2000.877070
Popis:	There is an extensive effort in the transistor industry to develop an alternative high-k gate dielectric to replace SiO/sub 2/ due to tunneling limits. We have investigated the potential of crystalline perovskite oxides (SrTiO/sub 3/ or STO) grown epitaxially over Si as a gate dielectric. Transmission electron microscopy images show that these epitaxial STO films have an interfacial amorphous layer
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::54c77f563191faf484371d0e2a9ae317 https://doi.org/10.1109/drc.2000.877070 Zobrazit plný text záznamu