Electrical properties of laser chemically doped silicon
| Autor: | D. D. Rathman, D. J. Silversmith, T. F. Deutsch, Daniel J. Ehrlich, Richard M. Osgood |
|---|---|
| Rok vydání: | 1981 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Dopant Silicon Photodissociation Doping chemistry.chemical_element Laser Photochemistry Fluence Dissociation (chemistry) law.invention Amorphous solid Condensed Matter::Materials Science chemistry law Condensed Matter::Superconductivity Physics::Atomic and Molecular Clusters Physics::Atomic Physics Physics::Chemical Physics |
| Zdroj: | Applied Physics Letters. 39:825-827 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.92572 |
| Popis: | The electrical properties of single‐crystal and amorphous Si, doped using a pulsed UV laser, have been studied as a function of laser wavelength and fluence and of UV dose. BCl3 or PCl3 parent gases were used to provide B or P dopant atoms. Dissociation of molecules adsorbed on the Si surface can supplement photolysis of gas‐phase molecules as a source of doping atoms. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|