Simulation of charge pumping current in hot-carrier degraded p-MOSFET's

Autor:	Anselm Yip, L.K. See, G.S. Samudra
Rok vydání:	2002
Předmět:	Charge pumping Materials science business.industry MOSFET Electronic engineering Optoelectronics Transient (oscillation) Current (fluid) Condensed Matter::Mesoscopic Systems and Quantum Hall Effect business Transient analysis
Zdroj:	ICSE'98. 1998 IEEE International Conference on Semiconductor Electronics. Proceedings (Cat. No.98EX187).
DOI:	10.1109/smelec.1998.781145
Popis:	Charge pumping is a widely used method of evaluating the Si-SiO/sub 2/ interfaces in MOSFETs. The modelling of this technique in a p-MOSFET using two-dimensional device simulator is presented. A two-dimensional transient model which accounts for the interface-state dynamics is employed to simulate the charge pumping in MOSFETs with good accuracy. The simulation results are substantiated by measurement results.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::54bcf9886ea9c208e050b32fa5b3194f https://doi.org/10.1109/smelec.1998.781145 Zobrazit plný text záznamu