Radiation-induced defects in InP〈Sn〉 single crystals irradiated with 60Co gamma quanta

Autor:	Sh. Sh. Rashidova
Rok vydání:	2011
Předmět:	chemistry.chemical_compound Materials science chemistry business.industry General Engineering Indium phosphide Optoelectronics Radiation induced Radioluminescence Activation energy Irradiation Condensed Matter Physics business
Zdroj:	Journal of Engineering Physics and Thermophysics. 84:479-482
ISSN:	1573-871X 1062-0125
DOI:	10.1007/s10891-011-0494-8
Popis:	The process of formation of antistructural defects in tin-doped InP crystals exposed to irradiation with gamma quanta of dose 10–100 kGy has been investigated by the radioluminescence method. It has been found that an activation energy of level 0.26 eV is favorable for obtaining semi-insulating indium phosphide.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::54b56083bf3b3df48d806909288ba9bc https://doi.org/10.1007/s10891-011-0494-8 Zobrazit plný text záznamu Plný text ve formátu PDF